High current implementation of Cu/P-type GaN triboelectric nanogenerator

Traditional surface engineering, as a means of manufacturing triboelectric nanogenerator (TENG), is complex and expensive. The yield of traditional polymer process is low, which leads to the high cost and low stability of traditional TENGs and greatly limits their practical applications. Moreover, it is worth noting that with the miniaturization and integration of electronic devices, generators need to provide higher current in parallel circuits. In this study, we report the performance of the enhanced Cu/P-type GaN TENG contacts in centimeter scale. Considering the high surface mechanical strength and surface structure characteristics of GaN wafers, we propose using molten KOH to etch the Ga polar GaN surface to form more interface electrons and dangling bonds without destroying the surface structure. Our experimental results show that the generator performance has been drastically improved (the short circuit current increases from 9 to 80 mu A, and the open circuit voltage increases from 8 to 29 V). The maximum load electric power density of similar to 0.28 W/m(2) was obtained. We also compared the open circuit current density with the reported different type TENGs based on Schottky contact at the centimeter-level. The Cu/P-type GaN TENGs achieved in this work exhibit excellent open circuit current density of similar to 36 mu A/cm(2). Thus, we provide insight into surface engineering for future generation TENG devices.