2D Modeling of the Annealing Process After Ion Implantation in n -on- p HgCdTe

A 2D model for the annealing process after ion implantation in HgCdTe was established. The 2D model was based on the diffusion equations of Hg vacancy and interstitial. Generation and annihilation of the Hg vacancy and interstitial were considered. The coupled diffusion equations combined with the boundary equation were solved simultaneously. Annealing temperature and annealing time dependence experiments were carried out to determine the key parameter and prove the effectiveness of the 2D model. This work provides an efficient 2D model of the annealing process in n -on- p HgCdTe, which makes the junction design of HgCdTe less costly and more accurate and gives fundamental guidance to the fabrication of small-pitch focal planes.