Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy
APPLIED PHYSICS EXPRESS(2023)
Abstract
ScAlMgO4 (SAM) has attracted attention as a substrate for nitride semiconductor crystal growth owing to its small a-axis lattice mismatch with GaN and InGaN. In this study, we investigated GaN growth on a SAM substrate via radio-frequency plasma-excited molecular beam epitaxy. By optimizing the growth conditions, GaN with the following epitaxial orientation relations (0001)(GaN)//(0001)(SAM) and [11-20](GaN)//[11-20](SAM) was successfully grown directly on the SAM substrate. The atomically flat and abrupt interface of GaN directly grown on the SAM substrate was observed via high-resolution transmission electron microscopy, and uniform GaN growth on a two-inch SAM substrate was also demonstrated.
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Key words
GaN,RF-MBE,crystal growth,epitaxy,ScAlMgO4
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