The intra/valence-band linear and third-order nonlinear optical properties of a laser-dressed double GaAsSb/GaAs parabolic quantum well: the effect of the geometry of the well and antimony content

In this research, a laser-dressed double GaAsSb/GaAs parabolic quantum well was modeled to explore the intra/valence-band transition-dependent optoelectronic features considering the effects of the geometry of the well and antimony content. The laser-dressed electronic characteristics were investigated by solving the Schrödinger equation within the framework of the effective mass for a variable masse versus the geometry of the confinement potential. The calculations were based on the Floquet technique and Kramers-Henneberger transformation using the finite element method. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were examined using the density matrix method through an iterative procedure. The laser field dependence exhibited a transition from a double confinement profile to a triple one along with an enhancement in the number of the electronic bound states. In the pursuit of laser studies, a split was detected in doubly degenerated energy states, leading to a blueshift along with an attenuated resonance in the intra/valence-band optical transitions with incrementing the laser-dressing effects. The optoelectronic features of the laser-dressed quantum well exhibited a complicated behavior under varying half-width of the well and the antimony content. Interestingly, the effect of the geometry of the well was more pronounced than the antimony content.