Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

The effect of beryllium co-doping on the magnetoresistance anisotropy in the GaMnAs layer grown via lowtemperature molecular beam epitaxy is investigated in this paper. The magnetoresistance anisotropy is observed in the GaMnAs:Be epilayer in the range of fields up to 2000 Oe along [110] and [1͞10] crystalligraphic axes. This anisotropy manifests itself in the different behavior of the temperature dependence of magnetoresistance and can result from the formation of spatially oriented structures in the GaMnAs epilayer, which emerge in the bulk of this layer during its growth.