Two-dimensional hybrid perovskite resistive switching memory inherited from photovoltaic devices

Ions or charged vacancies drift induced by electric fields in organic-inorganic halide perovskites (OIHPs) generally contributes to distinct current-voltage hysteresis, which drives the development of resistive switching memory (RSM) devices. Here, the two-dimensional (2D) OIHP films are adopted as the switching layer to fabricate the RSM devices with a simplified photovoltaic structure. The device displays stable and low voltage resistive switching (RS) characteristics, with an on/off ratio greater than 10(6) and a switching voltage as low as 0.4 V. After adding a NiOx hole transport layer in a completed photovoltaic device, the fabricated RSM devices without encapsulation show reliable RS behavior with an endurance over 4 x 10(2) cycles and a retention time of 10(3) s in atmospheric conditions. Both Ag ions and iodine vacancies conductive filaments are responsible for the RS properties. This work provides a perspective for appvlication in high-performance 2D OIHP RSM devices compatible with photovoltaic behavior.Published under an exclusive license by AIP Publishing. https://doi.org/10.1063/5.0134502