Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes
JAPANESE JOURNAL OF APPLIED PHYSICS(2023)
Abstract
We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balance the Ohmic contact and DUV light transmittance, which helps the Rh/Al p-type electrodes realize high reflection as well as good electrical performance. After optimization, the Rh/Al reflective p-type electrodes present reflectance of greater than 70% and specific contact resistivity of 3.75 x 10(-4) omega center dot cm(2). Due to the improvement in the light extraction efficiency, the highest wall-plug efficiency of 278 nm DUV-LEDs is improved by 57% compared to the conventional configuration with Ni/Au as the p-type electrodes.
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Key words
AlGaN,DUV-LEDs,light extraction efficiency,transparent p-type layer,Rh,Al p-type electrodes
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