Probing photocarrier dynamics in a Bi₂Te₃-Te eutectic p-n junction with a laser terahertz emission microscope

Bismuth telluride (Bi2Te3)-based heterostructures have attracted considerable attention owing to their interesting anisotropic properties and expected higher thermoelectric performance. Therefore, exploring the nature of the carrier dynamics in these heterostructures has been an important subject in the design and optimization of advanced materials. In the present study, hot carrier injection and its subsequent spatiotemporal behavior in a multilayered crystalline Bi2Te3-Tellurium (Te) eutectic composite were studied using a laser terahertz (THz) emission microscopy (LTEM). The THz emission electric fields at the Bi2Te3-Te interface were polarized perpendicular to the interface. The polarities of these waveforms reveal the direction of the electric field between the Bi2Te3 and Te regions, indicating the carrier types of these components and the p-n junction formed at the interface. In addition, in the Te region, a strong THz emission with an electric field polarized parallel to the interface was observed. This unique THz emission can be qualitatively explained through hot photocarrier anisotropic transport by considering the effective mass of electrons and holes. LTEM clarified the local carrier dynamics in the microstructures and revealed the potential distribution and anisotropic transport properties. These findings contribute to the exploration of eutectic heterostructures as new functional materials and provide new avenues for cutting-edge thermoelectric and photovoltaic devices.