High resistivity and low dielectric loss of LuFe 1− x Os x O 3 ( x = 0.0–0.10) ferrites

Journal of Materials Science: Materials in Electronics(2023)

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Abstract
LuFe 1− x Os x O 3 ( x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from − 100 °C to 100 °C by 20 °C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe 2+ and Fe 3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 °C.
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Key words
low dielectric loss,high resistivity
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