A van der Waals Heterostructure with an Electronically Textured Moire Pattern: PtSe2/PtTe2

The interlayer interaction in Pt-dichalcogenides strongly affects their electronic structures. The modulations of the interlayer atom-coordination in vertical heterostructures based on these materials are expected to laterally modify these interlayer interactions and thus provide an opportunity to texture the electronic structure. To determine the effects of local variation of the interlayer atom coordination on the electronic structure of PtSe2, van der Waals heterostructures of PtSe2 and PtTe2 have been synthesized by molecular beam epitaxy. The heterostructure forms a coincidence lattice with 13 unit cells of PtSe2 matching 12 unit cells of PtTe2, forming a moire superstructure. The interaction with PtTe2 reduces the band gap of PtSe2 monolayers from 1.8 eV to 0.5 eV. While the band gap is uniform across the moire unit cell, scanning tunneling spectroscopy and dI/dV mapping identify gap states that are localized within certain regions of the moire unit cell. Deep states associated with chalcogen p(z)-orbitals at binding energies of similar to -2 eV also exhibit lateral variation within the moire unit cell, indicative of varying interlayer chalcogen interactions. Density functional theory calculations indicate that local variations in atom coordination in the moire unit cell cause variations in the charge transfer from PtTe2 to PtSe2, thus affecting the value of the interface dipole. Experimentally this is confirmed by measuring the local work function by field emission resonance spectroscopy, which reveals a large work function modulation of similar to 0.5 eV within the moire structure. These results show that the local coordination variation of the chalcogen atoms in the PtSe2/PtTe2 van der Waals heterostructure induces a nanoscale electronic structure texture in PtSe2.