Real-Time Extraction of SiC mosfets’ Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application

IEEE Transactions on Power Electronics（2023）

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摘要

The SiC mosfet is a key component of the dc solid-state power controller (DC-SSPC). The reliability of DC-SSPCs can be improved by real-time online monitoring of the degradation of SiC mosfet s. At present, the degradation of SiC mosfet s can be indirectly monitored using thermosensitive electrical parameters (TSEPs); however, their degradation can cause nonnegligible measurement errors. Another limitation is that one type of TSEPs can only reflect a certain form of the degradation process. On this basis, in this article, the real-time extraction method of SiC mosfet s’ degradation features under improved accelerated power cycling tests for DC-SSPC application (i.e., average and standard deviation of the on -state resistance change rate ( avgk and stdk ) of the improved accelerated power cycling test) is proposed. The avgk and stdk can be easily obtained by simple calculations. This method can not only directly monitor the severe degradation of bonding wires, but it can also monitor the severe degradation of the solder layer without measuring the junction temperature ( T_J ). Compared with the traditional solder layer degradation feature extraction method using thermal resistance, for which T_J is essential, the monitoring results using the proposed method are not affected by the degradation of TSEPs. Finally, the effectiveness of the proposed method is verified by experimental results.

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关键词

Degradation features,on-sate resistance change rate,real-time,SiC mosfet,solid-state power controller

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