Spectroscopic ellipsometry and raman spectroscopy of Bi1-xSbxTeI solid solutions with x≤0.1

Z.S. Aliev,E.H. Alizade,D.A. Mammadov,J.N. Jalilli,Y.N. Aliyeva,N.A. Abdullayev,S.S. Ragimov, S.M. Bagirova, S. Jahangirov,N.T. Mamedov,E.V. Chulkov

Thin Solid Films（2023）

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摘要

•Bi1-x SbxTeI with x = 0, 0.95 and 0.1 is studied by spectroscopic ellipsometry.•Intraband and intersubband transitions are singled out and their parameters are determined.•Reduction of Rashba energy in Bi0.9Sb0.1TeI as compared to BiTeI is observed.

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关键词

Rashba semiconductor,Dielectric function,Lattice vibrations,Intraband transitions,Intersubband transitions

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