4H-SiC integrated circuits for high-temperature applications

•The characteristics of 4H-SiC NMOSFET and PMOSFET are presented from 25 °C to 500 °C.•The related integrated circuits based on 4H-SiC MOSFETs have been fabricated.•The gain of the 4H-SiC common-source amplifier is 37 dB and 32 dB at 25 °C and 300 °C.•The gain of the 4H-SiC differential amplifier is 30 dB and 34.6 dB at 25 °C and 300 °C.•The circuits’ indicators have reached the international mainstream level.