Ni-based metallization of GeSn layers: A review and recent advances

Andrea Quintero,Patrice Gergaud,Jean-Michel Hartmann,Vincent Reboud,Philippe Rodriguez

Microelectronic Engineering（2023）

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摘要

•Review of the last 10 years studies related to Ni-based metallization of GeSn layers.•Focus on solid-state reaction between Ni thin film and GeSn layers.•Behavior and impact of Sn on the solid-state reaction.•Review of technological levers to overcome the low thermal stability of the Ni/GeSn system.

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关键词

GeSn,Ni,Metallization,Contact,Solid-state reaction,XRD

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