Hysteretic behavior of all CVD h-BN/graphene/h-BN heterostructure field-effect transistors by interfacial charge trap

Superior electrical transport properties of graphene field-effect transistors (FETs) can be achieved when graphene is supported by a high-quality hexagonal boron nitride (h-BN) layer. The h-BN layer can serve as a highperformance insulator for a graphene channel to achieve high carrier mobility and to minimize doping effects on graphene by screening out the interaction with a gate oxide substrate. However, chemical vapor deposition (CVD) grown h-BN can have surface defects and impurities unlike mechanically exfoliated h-BN layers, which can result in completely different electrical transport properties of graphene FETs. In this study, we fabricated all CVD h-BN/graphene/h-BN FETs to explore how surface defects and impurities on the supporting h-BN layer can influence electrical transport properties of graphene. The presence of surface defects and impurities on the supporting h-BN layer, as revealed by Raman spectroscopy analysis, resulted in significant p-doping and hysteresis in the h-BN/graphene/h-BN FETs. Hysteresis in the FETs was induced by charge carrier trapping at the surface defects and impurities of the h-BN layer, which can be controlled by modulating a back-gate voltage. Based on the charge trapping mechanism on the surface of the h-BN, electrical charge states in all CVD h-BN/ graphene/h-BN can be modulated dynamically by realizing two different resistance states ('trap' vs. 'release' states), which can be utilized as memristive devices or sensors.