Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40 degrees-twisted bilayer WS2

The emerging two-dimensional materials, particularly transition metal dichalcogenides (TMDs), are known to exhibit valley degree of freedom with long valley lifetime, which hold great promises in the implementation of valleytronic devices. Especially, light-valley interactions have attracted attentions in these systems, as the electrical generation of valley magnetization can be readily achieved - a rather different route toward magnetoelectric (ME) effect as compared to that from conventional electron spins. However, so far, the moire patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations, even though the symmetry might be distinct from the AB stacked bilayer TMDs. Here, we study the valley Hall effect (VHE) in 40 degrees-twisted chemical vapor deposition (CVD) grown WS2 moire transistors, using optical Kerr rotation measurements at 20 K. We observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.