Graded Bandgap Ultrathin CIGS Solar Cells (Invited Paper)

In this paper, we physically modeled passivated ultrathin Cu (In1-xGax) Se-2 solar cells with different bandgap grading configurations. Firstly, we have designed the cell architecture according to the fabricated model. The novelty in this work is the modeling of passivated u-CIGS solar cells with different bandgap grading profile configurations in order to achieve high efficiency with a thickness of 500 nm. A significant influence on device performance has been observed while changing absorber doping density, electron affinity, and operating temperature (range of 10-70 degrees C) for the investigated samples. ZnS has been used as a buffer layer to replace the conventional CdS material in order to improve cell efficiency. The impact of the buffer doping density and electron affinity on u-CIGS cell performance is explored. The simulation results show that a high bandgap at the front and rear sides with an acceptor density of 2 x 10(16) provide the best electrical cell parameters: J(sc) of 31.53 mA/cm(2), V-oc of 742.78 mV, FF of 77.50%, eta of 18.15%. Our findings can be considered guidelines for new single and/or tandem cell optimization to achieve high efficiency.