Unveiling the Role of H-2 Plasma for Efficient InP Solar Cells
SOLAR RRL(2023)
Abstract
III-V semiconductors are among the highest performing materials for solar energy conversion devices. Exposing III-V semiconductors to a hydrogen plasma can improve optoelectronic properties and is a critical step in fabricating efficient InP solar cells. However, there is a limited understanding of the changes induced by hydrogen plasma exposure to the surface and in the bulk of III-V semiconductors. Herein, it is demonstrated that a 19.3% efficient p-InP solar cell with a TiO2 electron selective contact layer can be achieved by exposing the InP substrate to hydrogen plasma. Detailed investigations employing ultraviolet photoelectron spectroscopy and capacitance-voltage measurement unveil that the hydrogen plasma exposure on p-InP leads to charge carrier polarity inversion in the near-surface region (charge inversion layer) while simultaneously reducing the carrier concentration (charge-depleted layer) in the bulk. The study provides important insights into the impact of hydrogen plasma exposures on InP which may lead to more efficient optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, and photoelectrochemical cells.
MoreTranslated text
Key words
charge carrier depletion,hydrogen plasma,indium phosphide,solar cells,surface-type conversion
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined