Ferroelectrically modulated ion dynamics in Li+ electrolyte-gated transistors for neuromorphic computing

Li+ electrolyte-gated transistors (EGTs) have attracted significant attention as artificial synapses because of the fast response of Li+ ion, low operating voltage, and applicability to flexible electronics. Due to the inherent nature of Li+ ion, Li+ EGTs show, however, limitations, such as poor long-term synaptic plasticity and nonlinear/nonsymmetric conductance update, which hinder the practical applications of artificial synapses. Herein, Li+ EGTs integrated with poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ferroelectric polymer as a channel-electrolyte interlayer are presented. Owing to the polarized domains of PVDF-TrFE, the transport of Li+ ions at the channel-electrolyte interface is accelerated, and Li+ ions effectively penetrate the channel. Moreover, the self-diffusion of Li+ ions from the channel to the electrolyte is suppressed by the downward polarized domains. Li+ EGTs, therefore, successfully demonstrate synaptic characteristics, including excitatory postsynaptic current, short-/long-term synaptic plasticity, and paired-pulse facilitation. Also, conductance update in Li+ EGTs shows a dynamic range (G(max)/G(min)) of 92.42, high linearity, and distinct stability over 100 cycles. Based on their synaptic characteristics, inference simulations using a convolution neural network for the CIFAR-10 dataset imply that Li+ EGTs are suitable as artificial synapses with an inference accuracy of 89.13%. The new methodological approach addressing modulation of ion dynamics at the interface is introduced for developing practical synaptic devices.