High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf0.5Zr0.5O2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L (G)) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I (ON)/I (OFF)) of 9.3 x 10(7), a subthreshold swing of 130 mV dec(-1), a low drain-induced barrier lowing of 45 mV V-1, and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f (T)) of 155 GHz and a maximum oscillation frequency (f (max)) of 250 GHz, resulting in high (f (T) x f (max))(1/2) of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f (T) x BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. The power performance at 30 GHz exhibits a maximum output power of 1.36 W mm(-1), a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.