Monolithic master oscillator high efficiency diode laser with nearly diffraction-limited narrowband emission and 10 W of optical output power

High-power semiconductor laser with nearly diffraction limited narrow band emission was designed and fabricated. The monolithic master oscillator power-amplifier(MOPA)diode laser consists of distributed Bragg gratings,a narrow ridge waveguide and a tapered amplifier. The ridge waveguide with length of 8 mm and width of 3 mu m is used as the single-mode seed source. A tapered gain section with length of 7 mm and a full taper angle of 3.3 degrees amplify the seed power. The fabricated device reach an output power of 10.3 W with a slow axis beam quality M-2(1/e(2))factor of 1. 06 and an electro-optic efficiency of 50.5%. The spectral linewidth is 40 pm(3 dB),and a central wavelength tuning range of 4 nm was realized by the integrated Bragg gratings micro heater.