Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides
NANO LETTERS(2023)
Abstract
Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD-based tunneling LEDs. We show that this emission is not thermal in nature but consistent with exciton generation via a two-electron coherent tunneling process.
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Key words
transition metal dichalcogenides,van der Waals LED,overbias photon emission,exciton generation,multielectron tunneling,energytransfer
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