Ferroelectric Hf_0.5Zr_0.5O₂ films with improved endurance obtained through low temperature epitaxial growth on seed layers

A seed layer with a thickness of about 2 nm allows reduction of the threshold temperature for epitaxy of Hf0.5Zr0.5O2 films at least by 200 °C. Films deposited at low temperatures on seed layers show reduced ferroelectric fatigue and improved endurance.