Simulation of Edge Transient Current Technique on Silicon Low Gain Avalanche Detector

We successfully established a simulation process of edge-transient current technique on non-irradiated silicon p-i-n detector and low gain avalanche detector. In this work a p+ gain layer structure is set and an effective replacement of avalanche process is introduced, which is the first simulation result at the level of particle detector. A good consistency in comparison of the simulation with data is achieved in several aspects, including waveform, amplitude, rise time and charge collection, which ensured the reliability of this work and proved its potential to simulate other semiconductor devices with built-in gain. A trial of the simulation of electric field measurement is also done.