Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading
ADVANCED ELECTRONIC MATERIALS（2023）
关键词
Al-doped HfO2,intercell interference,lateral charge spreading,self-rectifying memory,vertical resistive switching memory
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要