X-RAY STRUCTURAL ANALYSIS OF n-Si < Cr >, IRRADIATED WITH ALPHA PARTICLES

In this work, the effect of alpha particles on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. Samples of n-Si were first doped with chromium and then irradiated with alpha particles at a dose of 6x10(14) c?(-2). It has been established that the irradiation dose used does not lead to the formation of a near-surface amorphous silicon layer. However, the obtained X-ray diffraction patterns indicate a slight deterioration in the crystallinity of silicon samples after their irradiation.