The characterization of a BSI sCMOS as a soft X-ray detector

Abstract： We test a newly developed back-side illumination scientific CMOS (BSI sCMOS) device for X-ray imaging spectroscopy. This BSI sCMOS has an array of 2048*2048 pixels with 11 um pixel size and 3.6 um epitaxial thickness. It is an active pixel sensor with fast read-out, low power consumption, low readout noise and inherent radiation hardness. We have investigated the performances. The readout noise is 1.5 e- r.m.s. ENC with energy resolution of 187 eV (3.2%) at 5.9 keV at -20oC. The dark currents as a function of temperature were also measured. This BSI sCMOS would be a quite promising device for X-ray applications.