FAME: Fault Address Memory Structure for Repair Time Reduction

2022 19th International SoC Design Conference (ISOCC)(2022)

引用 0|浏览3
暂无评分
摘要
Memory repair with redundancy analysis (RA) is widely used to improve memory yield. However, as the growth of the number of memory cells has increased, it has caused the increase in the number of faulty cells. For this reason, the repair time of memory has drastically increased. To address the problem, fault address memory structure for repair time reduction (FAME) is proposed in this paper. Although various RA studies have been proposed to reduce the fault analysis time, the read time of fault information from fault bitmap in automatic test equipment has not been considered. As FAME considers the read time of fault information, the repair time can be highly reduced due to the proposed fault address memory structure. Furthermore, FAME can be applied with all conventional RA studies. Experimental results demonstrate that the repair time is highly reduced regardless of the coordinated RA methods.
更多
查看译文
关键词
memory repair,fault bitmap,fault address memory,repair time,redundancy analysis
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要