A Transistor Array for Extracting Total Ionizing Dose Threshold Voltage Shifts

Total ionizing dose (TID) has a significant effect on fully depleted silicon on insulator (FDSOI) transistors, which can be characterized the front gate threshold voltage (Vth) shift. We present transistor array test structure to characterize transistor TID. The resulting structure is one device under test (DUT) on a larger test integrated circuit (IC). The transistor array allows TID testing of a largenumber of devices in a packaged die that is amenable to gamma irradiation and other reliability studies, fabricated on a 22 nm FDSOI process. The approach is however, applicable to any fabrication process.