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势垒型InAs/InAsSb Ⅱ类超晶格红外探测器研究进展(特邀)

Zhang Chunfang, Liu Yuan,Gong Mingliang,Liu Bingfeng,Gong Ruixin,Liu Jiabo,An Heping, Zhang Dongliang,Zheng Xiantong,Lu Lidan,Feng Yulin,Zhu Lianqing

wf（2022）

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Abstract
红外探测技术在卫星侦察、军事制导、天文观测、医疗检测、现代通信等重要领域发挥着关键作用.Ⅱ类超晶格(T2SLs)红外探测器作为继碲镉汞探测器之后的新一代红外探测材料,在稳定性、可制造性和成本等方面具有独特优势.势垒型InAs/InAsSb T2SLs红外探测器是最具潜力的T2SLs红外探测器之一,近年来其关键性能得到了稳步提高,但仍受吸收系数低、异质外延生长困难和暗电流大等因素的制约.文中综述了 Ⅲ-Ⅴ族T2SLs的发展历程,分析了势垒型InAs/InAsSbT2SLs红外探测器的不同势垒结构、关键性能和发展趋势,指出了势垒型InAs/InAsSbT2SLs红外探测器需要解决的关键问题和未来发展方向.
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Key words
T2SLs,InAs/InAsSb
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