Gate Tunable Lateral 2D Pn Junctions: An Analytical Study of Its Electrostatics
IEEE Transactions on Nanotechnology（2023）
Abstract
The electrostatics of two-dimensional (2D) lateral
pn
homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical expressions are obtained from the solution of the 2D Poisson equation considering a depletion approximation. Straightforward analytical models for the electrostatic potential and the depletion width within both the dielectric and the 2D semiconductor are obtained for both the symmetrical and asymmetrical cases. In contrast to the case of devices with chemical doping, the obtained depletion width model of devices with electrostatic doping do not depend on the dielectric constant but only on the electrostatic potential and oxide thickness. The models describe the electrostatics of gate-tunable 2D
pn
junctions at arbitrary bias. A benchmark against numerical device simulations of MoS
$_{2}$ pn
junctions validate the analytical models.
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Key words
2D pn junction,electrostatic potential,depletion width
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