High Performance Moo3/Cu-Doped Ag/Hfo2 Transparent Conductive Electrode for Organic Photodetectors

Organic photodetectors (OPDs) present great potential in the field of flexible integrated equipment, the transparent conductive electrode (TCE) is one of the main barriers hindering the application of OPDs. In this work, we developed a MoO3/Ag-Cu/HfO2 multilayer structure that exhibits enhanced photoelectric properties. The Cu dopants have been demonstrated can increase the transmittance and decrease the surface roughness and sheet resistance of the ultra-thin Ag film. Moreover, the Cu dopants can synchronously prevent the Ag components from oxidized and keep the film from absorbing hydroxide. The near ultraviolet to near infrared (NUV-NIR, 300nm-1100nm) transmittance of the ultra-thin Ag-Cu film is furtherly improved by applying the MoO3 and HfO2 layer as anti-reflective structure. The thickness of the HfO2 layer is optimized to 50nm through simulation. The MoO3/Ag-Cu/HfO2 multilayer presents a root-mean-square roughness (RMS) of 0.64nm with a sheet resist of 13.0 Ω/□, and the average NUV-NIR transmittance is 77.8% (88.1% in the visible light range). The photoelectric performance of this multilayer TCE has been fully verified in an OPD device based on the active materials of ITIC-Th and PBDB-T. The MoO3/Ag-Cu/HfO2 structure has been demonstrated can improve the detective property and stability simultaneously.