Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

Haonan Tang, Sergej Pasko,Simonas Krotkus, Thorsten Anders, Cornelia Wockel,Jan Mischke,Xiaochen Wang,Ben Conran,Clifford McAleese, Ken Teo,Sreetama Banerjee,Henry Medina Silva,Pierre Morin,Inge Asselberghs,Amir Ghiami,Annika Grundmann,Songyao Tang,Hleb Fiadziushkin,Holger Kalisch,Andrei Vescan,Salim El Kazzi,Alain Marty,Djordje Dosenovic,Hanako Okuno, Lucie Le Van-Jodin,Michael Heuken

Journal of Crystal Growth（2023）

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摘要

•Lateral growth of nucleated WS2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated.•The crystalline quality of coalesced WS2 monolayers with <10% bilayer was assessed by GIXRD and 4D-STEM.•Electrical properties of the WS2 layers were determined using backgated TLM structures demostrating Ion/Ioff > 108 and electron mobility of 5 cm2/Vs.•Impact of the change of offcut direction of sapphire, substrate annealing temperature and WS2 growth temperature was investigated.

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关键词

A1. Crystal morphology,A1. Low dimensional structures,A1. Nucleation,A3. Metalorganic chemical vapor deposition,B1. Nanomaterials,B1. Sulfides

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