Modeling Temperature Response Profile of MOSFET Chip with Heat Sink Parameters in Power Inverters

Direct current to alternating current converter is applied in the conversion of renewable energy such as solar and wind energy. The switching operation is performed by metal oxide semiconductor field effect transistor chips (MOSFET), during the operation heat is generated and if the heat generated is not properly dissipated, it may lead to thermally induced failure. This research modelled the temperature profile of the MOSFET chip with geometrical properties of the heat sink to which they are attached. The model was implemented in a MATLAB environment to obtained optimal heat sink parameters which was solved numerically with ANSYS and experimentally tested in a 1.6 kW inverter. The maximum MOSFET temperature obtained analytically, numerically and experimentally are is 73.68°C, 81.44°C and 87.35°C at a pulse load of 1000W. The numerical and experimental results of the optimized heat sink temperatures show good correlation with 7% deviation at a pulse load of 1000W and an average deviation of 17% in the power range of 600W to 1000W which shows that the optimized heat sink for the MOSFET chips work well and the model can be deploy for rapid prototyping of power inverter.