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III-V/III-N technologies for next generation high-capacity wireless communication

N. Collaert,A. Alian, A. Banerjee,G. Boccardi,P. Cardinael,V. Chauhan,C. Desset,R. ElKashlan,A. Khaled,M. Ingels,B. Kunert,Y. Mols,B. O’Sullivan,U. Peralagu, N. Pinho, R. Rodriguez,A. Sibaja-Hernandez, S. Sinha, X. Sun,A. Vais,B. Vermeersch,S. Yadav, D. Yan,H. Yu, Y. Zhang,M. Zhao,J. Van Driessche, G. Gramegna,P. Wambacq,B. Parvais,M. Peeters

2022 International Electron Devices Meeting (IEDM)（2022）

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Abstract
In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.
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high-capacity
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