Wafer-scale controlled growth of MoS 2 by magnetron sputtering: from in-plane to inter-connected vertically-aligned flakes.

Recently, Molybdenum disulfide (MoS) has attracted great attention due to its unique characteristics and potential applications in various fields. The advancements in the field have substantially improved at the laboratory scale however, a synthesis approach that produces large area growth of MoSon a wafer scale is the key requirement for the realization of commercial two-dimensional (2D) technology. Herein, we report tunable MoSgrowth with varied morphologies via radio frequency magnetron sputtering by controlling growth parameters. The controlled growth from in-plane to vertically-aligned (VA) MoSflakes has been achieved on a variety of substrates (Si, Si/SiO, sapphire, quartz, and carbon fiber). Moreover, the growth of VA MoSis highly reproducible and is fabricated on a wafer scale. The flakes synthesized on the wafer show high uniformity, which is corroborated by the spatial mapping using Raman over the entire 2-inch Si/SiOwafer. The detailed morphological, structural, and spectroscopic analysis reveals the transition from in-plane MoSto VA MoSflakes. This work presents a facile approach to directly synthesize layered materials by sputtering technique on wafer scale. This paves the way for designing mass production of high-quality 2D materials, which will advance their practical applications by integration into device architectures in various fields.