Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices

Muhammad Ahsan Iqbal, Haowei Xie, Lu Qi, Wei-Chao Jiang, Yu-Jia Zeng

Small (Weinheim an der Bergstrasse, Germany)(2023)

Cited 7|Views17
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Abstract
Ferroelectric (FE) materials, including BiFeO3, P(VDF-TrFE), and CuInP2S6, are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.
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Key words
ferroelectric materials,low-dimensional materials,nonvolatile memories,photodetectors
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