Modeling coupled lines in 65 nm CMOS for millimeter-wave applications

Monique Kirkmanbey,Rediet Sebsebie,Marvin Aidoo,Liangjin Wu,Numan S Dogan,Zhijian Xie

Lexington, KY（2014）

引用 3|浏览18

暂无评分

摘要

An analysis of the behavior of coupled lines in the 100-200 GHz frequency range is presented. Characterization of lumped and electromagnetic elements are included as a preliminary work to predict the behavior of the line in a Rotary Traveling Wave Oscillator (RTWO) integrated circuit. Using Sonnet and Agilent ADS, the simulated behavior of a coupled transmission line implemented in 65 nanometer CMOS is presented as well as the method used for modeling the lines.

查看译文

关键词

coupled transmission lines,field effect mimic,oscillator strengths,oscillators,agilent ads,cmos integrated circuits,rtwo,sonnet,coupled transmission line,frequency 100 ghz to 200 ghz,millimeter-wave integrated circuits,rotary traveling wave oscillator,size 65 nm,transmission lines,coupled microstrips,modeling and simulation,power transmission lines,microstrip,scattering parameters,fitting,layout,semiconductor device modeling

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要