Study of GaN/AlGaN air structure gate HEMTs with high linearity for RF applications

The effect of a novel float gate HEMT with Gan cap under the gate is studied, its DC and RF characteristics have been shown by using SILVACO TCAD tool, as contrast, the simulation of the conventional T shape gate hemt, which fitting well with the experimental result, is also demonstrated. The proposed structure offers approximately 5 times improvement in power gain cutoff frequency (fmax) and current gain Cut-off frequency(fT) (from 5.68 and 3.7 GHz to 30.1 and 20.1 GHz, respectively.) and it greatly enhances the linearity of the Gan based HEMT, a much flatter curve for fT/fmax versus gate voltage are also shown, and 1 V positive threshold voltage shift is gained, meanwhile the off-state drain leakage current is also improved to a certain extend, therefor the hemt obtains a much higher Ion/Ioff ratio, without sacrificing the saturate current. Besides, the degradation of drain current due to the self-heating effect is also ameliorated by applying the novel structure. Finally, the corresponding electrical characteristic changes are systematically analyzed according to the energy band and other schematic diagrams, the physical insight is given in explaining the mechanism inside.