退火温度对铌掺杂氧化铟透明薄膜性能的影响
Journal of Foshan University(Natural Science Edition)（2022）
Abstract
采用磁控溅射法制备了铌(Nb)掺杂氧化铟(In2O3)透明薄膜(InNbO),研究了不同退火温度对薄膜的形貌、结构、光学透过率以及电学性能等的影响.研究表明,所制备的薄膜表面致密均匀、无明显孔隙与裂痕,薄膜呈现结晶相,无明显晶格畸变,在波长380～780 nm的可见光范围内透过率约86％,拟合的禁带宽度Eg随薄膜退火温度升高而增大,当薄膜进行400℃退火后,Eg为3.89 eV,未退火时薄膜电阻率最低(约9.4×10-2 Ω·cm),随退火温度升高薄膜的电阻率表现为先增大后减小.
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Key words
magnetron sputtering,InNbO,transparent films,annealing treatment,transmittance
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