Improved electrical performance of lateral beta-Ga2O3 MOSFETs utilizing slanted fin channel structure

In this Letter, lateral slanted-fin-channel beta-Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) are demonstrated. A 600-nm thick n-type doped channel layer is adopted to improve output characteristics. The tri-gate structure enhances gate control in the proposed beta-Ga2O3 MOSFETs, showing an on/off ratio as high as 10(9). In particular, the slanted-fin-channel structure, mainly located in the gate region, reduces the peak electric field in the Ga2O3 channel due to the gradual regulation of a threshold voltage. The slanted-fin-channel beta-Ga2O3 MOSFETs show a breakdown voltage (V-br) of 2400 V and a power figure-of-merit of 193 MW/cm(2), which are almost 2 and 5.5 times larger, respectively, than those of conventional straight-fin-channel devices. These results imply that the slanted-fin channel structure provides a viable way of fabricating high-performance beta-Ga2O3 MOSFET power devices. Published under an exclusive license by AIP Publishing.