III-V-on-Silicon-Nitride Mode-Locked Laser with 2 pJ On-Chip Pulse Energy

Artur Hermans,Kasper Van Gasse,Jon O. Kjellman,Charles Caer,Tasuku Nakamura,Yasuhisa Inada,Kazuya Hisada,Taku Hirasawa,Sulakshna Kumari,Aleksandrs Marinins,Roelof Jansen,Gunther Roelkens,Philippe Soussan,Xavier Rottenberg,Bart Kuyken

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2021）

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摘要

We demonstrate a III-V-on-silicon-nitride electrically pumped mode-locked laser emitting at lambda = 1.6 mu m with an on-chip pulse energy of approximately 2 pJ, significantly higher than on III-V-on-Si and InP photonic integration platforms. (c) 2021 The Author(s)

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关键词

2 pJ on-chip pulse energy,III-V-on-silicon-nitride electrically pumped mode-locked laser,energy 2.0 pJ,wavelength 1.6 mum,SiN

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