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Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS2 Quantum Dots for Resistive Random‐Access Memory Devices

ADVANCED MATERIALS INTERFACES(2023)

Cited 2|Views7
Key words
light-enhanced negative differential resistance,MoS2 quantum Dots,multi-level resistive switching,non-volatile memory device
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