Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
Micromachines（2020）
Abstract
This paper presents etching of convex corners with sides along and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.
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Key words
no convex corner compensation,parallelogram,silicon,wet etching,tetramethylammonium hydroxide (tmah)
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