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Influence of AlGaN N-Type Doping and AlN Thickness on the Two-Dimensional Electron Gas Density (ns) and Resistance (R2DEG)

SOLID-STATE ELECTRONICS(2023)

Cited 5|Views25
Key words
AlGaN/AlN/GaN heterostructure,2DEG,AlN spacer,n-dopedAlGaN,Schrodinger-Poisson simulations,Measurements
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