Corrigendum to “TCAD simulations of FDSOI devices down to deep cryogenic temperature” [Solid-State Electron. 194 (2022) 108319]

E. Catapano, M. Cassé, F. Gaillard,S. de Franceschi,T. Meunier,M. Vinet, G. Ghibaudo

Solid-State Electronics(2023)

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Key words
fdsoi devices,deep cryogenic temperature”,electron,corrigendum,[solid-state
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