Analytical model of free charge transfer in charge-coupled devices

SOLID-STATE ELECTRONICS(2023)

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Abstract
A one-dimensional analytical model of charge transfer in charge-coupled devices, which describes the spatial- temporal behavior of the charge carrier density in a potential well, is presented. The general solution of this model considers the transfer dynamics in terms of the electric drift field, i.e., self-induced drift and fringing -field drift, and yields an analytical solution for the total number of charge carriers. A comparison of the transfer efficiency for various electric drift fields is presented. The modulation transfer function in dependence on the transfer efficiency is analyzed, aiming especially at time-delay integration (TDI) applications. Finally, the results of this model are concluded and discussed in detail.
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Key words
Charge coupled device,Self-induced drift,Fringing-field drift,Electric drift field,Transfer efficiency,Charge transfer,Modulation transfer function,Time-delay integration
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