Improved passivation performance of Al2O3 interlayer/MoOX thin films continuously grown via atomic layer deposition

Minji Jeong,Jihye Park,Young Joon Cho,Hyo Sik Chang

Thin Solid Films（2023）

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Abstract

•Low temperature ALD-Al2O3 interlayer and ALD-MoOx film grown at 170°C.•Improved passivation characteristics of Al2O3/MoOX films continuously grown via ALD.•Al2O3 changes suboxide states and increase to Si4+ to form network that mimicked SiO2.•1 nm ALD-Al2O3 interlayer reduced defect and increased the work function of ALD-MoOx.

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Key words

Aluminum oxide,Atomic layer deposition,Molybdenum oxide,Oxidation state,Surface passivation

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