FR4 Test Board for Measurements on InP Resonant Tunneling Diode THz Oscillators Integrated via Flip Chip Bonding Technology

In order to move from laboratory setups to field demonstration of THz systems and thus make this frequency range useful for various applications, it is necessary to move from single THz chips to integrated modules. Challenging in this chip integration are the added parasitic effects, which can strongly influence the single chip performance. Due to this, it is important to choose a suitable integration method and consider its influences on the single chip in the design process. In this work a first simple integration approach of 1x1 mm ² InP resonant tunneling diode (RTD) oscillators with on-chip antenna on a carrier substrate is presented. The overall system consists of an FR4 carrier substrate onto which the oscillator chip is mounted using a flip-chip technology. In order to increase the outcoupling of the radiation into free space a hyper-hemispherical silicon lens is mounted on the chip. With this arrangement an oscillation frequency of 416 GHz could be demonstrated.