High-Performance Piezotronic Devices Based on ALN

Piezotronics and piezo-phototronics by adopting piezoelectric semiconductor (such as ZnO, GaN, InN, and monolayer MoS 2 ) have received more and more interests in piezotronic strain sensor, self-powered sensor, and flexible devices. The strain generated piezoelectric charges can tune the carriers transport properties. We proposed a piezotronic M-S junction based on AIN. The electric characteristic (including Current-Voltage, Current-Strain), piezoelectric characteristic of piezotronic M-S junction is calculated by finite element method. The Gauge Factor of piezotronic M-S junction can reach over 2000 due to adjustion of piezotronic effect. This study not only enrich theory of piezotronics, and provide guidance for experiments of piezotronic devices.